Method for the selective removal of an unsilicided metal

Details Method for the selective removal of an unsilicided metal Method for the selective removal of an unsilicided metal

2007-01-15

2009-08-04

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S752000, C438S755000, C438S650000, C438S651000

Reexamination Certificate

active

07569482

ABSTRACT:
An integrated circuit is silicided by depositing at least one metal on a silicon-containing region and forming a metal silicide. Residue metal that has not been silicided during the formation of the metal silicide is then removed. The removal of the residue metal involves the conversion of the residue metal to an alloy containing the germanide of said metal with minimal if any adverse affect on the silicide. Next, the alloy is removed, in a manner selective to the silicide, by dissolving the alloy in a chemical solution.

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Preliminary French Search Report, FR 06 00436, dated Sep. 11, 2006.

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