Method for the selective formation of a silicide on a wafer...

Details Method for the selective formation of a silicide on a wafer... Method for the selective formation of a silicide on a wafer...

2006-04-04

2006-04-04

Chen, Jack (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S279000, C438S286000, C438S655000

Reexamination Certificate

active

07022595

ABSTRACT:
A method for the selective formation of a suicide on a slice of semiconductor material that comprises exposed regions to be silicided and exposed regions not to be silicided, comprising the following steps: a) forming a resist thin mask on top of the regions not to be silicided; b) implanting ions wafer-scale through said mask so as to form beneath the resist layer an implantation residue layers using the resist layer; c) removing the resist layer; d) depositing conformally a metal layer on the wafer; e) performing rapid heat treatment so as to form a silicide by siliciding the metal deposited at step d); and f) removing the metal that has not reacted to the heat treatment of step e).

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