Method for the programming of an anti-fuse, and associated...

Details Method for the programming of an anti-fuse, and associated... Method for the programming of an anti-fuse, and associated...

2005-08-09

2005-08-09

Nguyen, Viet Q. (Department: 2827)

Static information storage and retrieval

Read/write circuit

Having fuse element

C365S096000

Reexamination Certificate

active

06928021

ABSTRACT:
An anti-fuse transistor includes a source, a drain and a well connected together, and a gate. A method for programming the anti-fuse transistor includes applying a reference potential to the gate, and applying a high potential greater than the reference potential to the drain of the anti-fuse transistor. A first access transistor is connected to the anti-fuse transistor. The first access transistor includes a drain connected to the source of the anti-fuse transistor, and a source for receiving the high potential. Applying the high potential to the drain of the anti-fuse transistor includes turning on the first access transistor.

REFERENCES:
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patent: 6535046 (2003-03-01), Kaiser et al.
patent: 6788587 (2004-09-01), Van De Graaff
patent: 2001/0026494 (2001-10-01), Marr et al.
patent: 2004/0065941 (2004-04-01), Marr
patent: 2000299383 (2000-10-01), None
patent: 2001102456 (2001-04-01), None

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