Method for the production of semiconductor lasers

Details Method for the production of semiconductor lasers Method for the production of semiconductor lasers

1984-08-27

1986-02-11

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29569L, 29580, 148175, 156653, 156657, 1566591, 156662, 357 17, 357 56, 427 87, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

045697213

ABSTRACT:
A method for the production of semiconductor lasers comprising: (a) forming a substrate having a striped portion on its face, said striped portion being formed into a mesa, (b) forming a current blocking layer on each of said striped portion and the remaining face of said substrate, (c) eliminating said current blocking layer only on said striped portion thereby allowing electric current to flow through the substrate and form said striped portion into a terrace or a groove, as a whole, and (d) successively laminating crystal growth layers for laser operation on the whole face of the substrate in strict conformity with said terrace or groove on the face of said substrate, thereby attaining stabilization of the transverse mode of laser oscillation.

REFERENCES:
patent: 4404730 (1983-09-01), Heimen
patent: 4425650 (1984-01-01), Mito et al.

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