Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Reexamination Certificate
2009-07-06
2011-12-13
Menz, Laura (Department: 2813)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
C438S057000, C438S542000
Reexamination Certificate
active
08076218
ABSTRACT:
A method for the manufacture of carbon based electrical components is herein presented. In the method a wafer substrate is provided upon which a first layer of carbon based semiconductor is deposited. The first layer of carbon based semiconductor is introduced to a first doping agent precursor and the first doping agent precursor and first layer of carbon based semiconductor are irradiated with light having a wavelength in the ultraviolet spectrum thereby selectively doping areas of the first layer of carbon based semiconductor.
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Carothers Daniel N.
Thompson Rick L.
BAE Systems Information and Electronic Systems Integration Inc.
Long Daniel J.
Menz Laura
Vern Maine & Associates
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