Method for the production of n-doped silicon with a dish-shaped

Details Method for the production of n-doped silicon with a dish-shaped Method for the production of n-doped silicon with a dish-shaped

1976-10-12

1978-10-10

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

176 10, 357 38, 357 91, H01L 21263

Patent

active

041194411

ABSTRACT:
A method is disclosed for the production of n-doped silicon single crystals, each having a dish-shaped specific electrical resistance profile in a radial direction about a central axis of the crystal. A silicon single crystal is exposed to a pattern of radiation with neutrons according to the reaction 30.sub.Si (n,.gamma.) 31.sub.Si .sup..beta.-.fwdarw. 31.sub.P. The neutron radiation causes a weaker doping concentration in marginal regions of the crystals due to the production of fewer phosphorus atoms. Either p-conductive silicon crystals or n-conductive silicon crystals may be utilized as an initial material for exposure to the neutron radiation.

REFERENCES:
patent: 3255050 (1966-06-01), Klahr
patent: 3967982 (1976-07-01), Arndt et al.
C. N. Kahr et al., "Neutron Transmutation Doped Semi-Conductors", Nuceonics, 22, (1964) 62.
S. M. Sze et al., ". . . Junction Curvature on Breakdown Voltage . . . . ", Solid-State-Electronics, 9 (1966) 831.
Sh. M. Mirianashivili et al., "Transmutation Doping of GaAs", Sov. Phys. - Semiconductors, 4 (1971) 1612.

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