Method for the production of an integrated circuit bar...

Details Method for the production of an integrated circuit bar... Method for the production of an integrated circuit bar...

2008-06-03

2008-06-03

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S638000, C438S688000, C257SE21577

Reexamination Certificate

active

07381645

ABSTRACT:
The document explains, inter alia, a method in which a titanium nitride layer is removed by wet chemical means (106). Following removal of the titanium nitride, further metalization strata are produced (114). The result is an integrated circuit arrangement having connections which have a low electrical resistance. The circuit arrangement is particularly suitable for the purpose of switching high powers.

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patent: 1 073 114 (2001-01-01), None
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Office Action from the German Patent Office dated May 22, 2003.

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