Method for the production of a titanium/titanium nitride double

Details Method for the production of a titanium/titanium nitride double Method for the production of a titanium/titanium nitride double

1987-12-18

1988-11-08

Weisstuch, Aaron

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

427192, C23C 1500, H01L 21443

Patent

active

047832487

ABSTRACT:
A method for producing consecutive layers of titanium and titanium nitride on a substrate to produce a contact and barrier layer between, for example, aluminum and silicon surfaces or silicide surfaces utilizing cathode sputtering in a one chamber magnetron sputtering system. The titanium and titanium nitride layers each occur as a plurality of individual layers formed in a cyclical process with temperature treatments being carried out between the deposition of the individual layers. During the deposition of the titanium nitride layer, the nitrogen concentration in the reaction gas is adjusted higher than that stoichiometrically required for production of titanium nitride. The resulting combined layers provide low mechanical stressing, good thermal stability, low contact resistance and similar advantages. The method may be employed for the production of megabit-DRAM cells and logic circuits.

REFERENCES:
patent: 4702967 (1987-10-01), Black et al.
Kanamori-"Investigation of Reactively Sputtered TiN Films for Diffusion Beariers", Thin Solid Films, 136 (1986) pp. 195-214.
Iwabuchi et al.-"A Highly Reliable Pure Al Metalization with Low Contact Resistance Utilizing Oxygen-Stuffed TiN Bearier Layer" 1986, Symposium on VLSI Technology, May 1986, pp. 55-56.

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