Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...
Reexamination Certificate
2006-10-06
2008-09-30
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
C204S192100, C257SE21347
Reexamination Certificate
active
07429543
ABSTRACT:
Method for producing a substrate includes establishing a plasma discharge with a locally inhomogeneous density distribution and exposing the substrate to the inhomogeneously density-distributed plasma discharge. The distribution is established by establishing a specified relative movement of the inhomogeneous density distribution and of the substrate and establishing a specified time variation of an electric power signal supplying the discharge and/or of an optionally provided further electric signal which connects the substrate to bias voltage. When the electric power signal or further electric signal is an AC signal, the specified time variation of the signal addresses its modulation and the method includes setting the variation and the movement.
REFERENCES:
patent: 7138343 (2006-11-01), Kadlec et al.
Halter Thomas
Kadlec Stanislav
Kügler Eduard
Coleman W. David
Notaro & Michalos P.C.
OC Oerlikon Balzers AG
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