Method for the production of a semiconductor component...

Details Method for the production of a semiconductor component... Method for the production of a semiconductor component...

2007-05-07

2008-11-04

Tran, Long K (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S167000, C438S270000, C438S574000, C438S606000, C257S194000, C257SE21205, C257SE21407, C257SE29250, C257SE29135

Reexamination Certificate

active

07445975

ABSTRACT:
A semiconductor component, particularly a pHEMT, having a T-shaped gate electrode deposited in a double-recess structure, is produced with a method with self-adjusting alignment of the recesses and of the T-shaped gate electrode.

REFERENCES:
patent: 5556797 (1996-09-01), Chi et al.
patent: 5641977 (1997-06-01), Kanamori
patent: 5796132 (1998-08-01), Nakano et al.
patent: 6586319 (2003-07-01), Hirano
patent: 2004/0082158 (2004-04-01), Whelan et al.
patent: 2004/0157423 (2004-08-01), Behammer
patent: 2005/0127398 (2005-06-01), Taniguchi et al.

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