Method for the pretreatment of a substrate for ion implantation

Details Method for the pretreatment of a substrate for ion implantation Method for the pretreatment of a substrate for ion implantation

1984-08-21

1987-01-13

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG73, 148187, C30B 102

Patent

active

046362800

ABSTRACT:
An IC wafer with a uniform distribution of impurities is obtained by a pretreatment comprising annealing a semiconductor substrate at a high temperature for a long period of time and then cooling rapidly before IC processing.

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patent: 4357180 (1982-11-01), Molnar
patent: 4447497 (1984-05-01), Manasevit
patent: 4576652 (1986-03-01), Hovel et al.
Fisher et al., J. Electrochem Soc, vol. 123, No. 3, 3/76, pp. 434-435.
Komaleeva et al., Sov. Phys. Semicond V10, No. 2, 2/76, pp. 191-192.
Nagasawa et al., Appl. Phys. Lett. 37(7) 10/1/80, pp. 622-624.
R. L. Chapman et al., "Transient Annealing of Selenium-Implanted Gallium Arsenide Using a Graphite Strip Heater", 320 Applied Physics Letters, vol. 40(1982), pp. 805-807.
Fumio Shimura et al., "Thermally Induced Defect Behavior and Effective Intrinsic Gettering Sink in Silicon Wafers", 1046 Jnl of Electrochemical Sty, vol. 128(1981), pp. 1579-1583.

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