Method for the preparation of epitaxial ferromagnetic manganese

Details Method for the preparation of epitaxial ferromagnetic manganese Method for the preparation of epitaxial ferromagnetic manganese

1991-03-07

1992-12-08

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156610, 156611, 156613, 156614, 156DIG61, 156DIG73, 156DIG103, C30B 3000

Patent

active

051694859

ABSTRACT:
A non-volatile memory element based upon a thin epitaxial film of manganese aluminum upon a III-V semiconductor is described. The film is stable at elevated temperatures required for III-V semiconductor device processing, so permitting the monolithic integration of non-volatile memory elements with III-V semiconductor electronic and photonic devices.

REFERENCES:
patent: 3146137 (1964-08-01), Williams
patent: 3399072 (1968-08-01), Pulliam
patent: 3839084 (1974-10-01), Cho et al.
patent: 4829022 (1989-05-01), Kobayashi et al.
"Synthesis of Ferromagnetic & Phase of Mn-Al films by sputtering;" Marisako et al.; Journal Applied Physics vol. 61(8); Apr. 15, 1987.
"Epitaxial Ferromagnetic & MnAl films on GaAs;" Sands et al.; Applied Physics Letters; vol. 57(24), Dec. 10, 1990.

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