Method for the manufacture of a power semiconductor component

Details Method for the manufacture of a power semiconductor component Method for the manufacture of a power semiconductor component

1999-02-01

2000-05-23

Picardat, Kevin M.

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

438400, 438135, 438133, H01L 2176

Patent

active

060665424

ABSTRACT:
Component structures of, for example, IGBTs are manufactured on the respective top sides of two substrates, the substrates are thinned proceeding from their respective back sides, and, after polishing, the back sides of the thinned substrates are durably electrically conductively connected to one another by wafer bonding.

REFERENCES:
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patent: 5489787 (1996-02-01), Amaratunga et al.
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patent: 5602405 (1997-02-01), Terasawa
patent: 5608237 (1997-03-01), Aizawa et al.
patent: 5702962 (1997-12-01), Terasawa
"High Frequency 6000 V Double Gate GTOs With Buried Gate Structure," Ogura et al, Proc. Of 1990 Int. Symp. On Power Semiconductor Devices & ICs, Tokyo, pp. 252-255.
"Bubble-Free Silicon Wafer Bonding In A Cleanroom Environment," Stengl et al, Japanese Journal of Applied Physics, vol. 27, No. 12, Dec. 1988, pp. L2364-L2366.

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