Method for the implantation of dopant

Details Method for the implantation of dopant Method for the implantation of dopant

1996-10-03

1999-05-04

Bowers, Charles

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

H01L 21425

Patent

active

058997334

ABSTRACT:
Method for the implantation of dopant into semiconductor material, whereby a reaction gas, for example fluorine, is conducted from a gas bottle via valves and mass flow regulator into a recipient into which dopant or a chemical compound of dopant has been introduced in solid form, so that the reaction gas reacts with the dopant to form a gaseous chemical compound, and this gas is subsequently forwarded into an apparatus for the implantation. A plurality of gas bottles for employing various reaction gasses and a plurality of recipients can be employed for an implantation of different dopants in alternation.

REFERENCES:
patent: 5360921 (1994-11-01), Kiso et al.
patent: 5426944 (1995-06-01), Li et al.
patent: 5500095 (1996-03-01), Shinagawa et al.
patent: 5656820 (1997-08-01), Murakoshi et al.
Handbook of "Ion Implantation Technology"J.F. Ziegler IBM-Research --1992 --pp. 435-439.
Wolf et al. "Silicon Processing for the VLSI Era Volume 1-Process Technology" pp. 308-314. Lattice Press, Sunset Beach CA, USA, 1986.

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