Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of... – By differential heating
Reexamination Certificate
2006-04-04
2006-04-04
Wilson, Christian D. (Department: 2891)
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
By differential heating
C438S795000
Reexamination Certificate
active
07022627
ABSTRACT:
A substrate undergoes a semiconductor fabrication process at different temperatures in a reactor without changing the temperature of the reactor. The substrate is held suspended by flowing gas between two heated surfaces of the reactor. Moving the two heated surfaces in close proximity with the substrate for a particular time duration heats the substrate to a desired temperature. The desired temperature is then maintained by distancing the heated surfaces from the substrate and holding the heated surface at the increased distance to minimize further substrate heating.
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Porter, et al., Fast-ramp rapid vertical processor for 300-mm Si wafer processing. SPIE vol 3507, Sep. 1998, p 42-53.
Granneman Ernst H. A.
Kuznetsov Vladimir I.
Pages Xavier
Vermont Pascal G.
ASM International N.V.
Knobbe Martens Olson & Bear LLP
Wilson Christian D.
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