Fishing – trapping – and vermin destroying
Patent
1991-07-24
1993-09-07
Maples, John S.
Fishing, trapping, and vermin destroying
437192, 437200, 437247, H01L 21441, H01L 21477
Patent
active
052428605
ABSTRACT:
A process is described for forming, over a silicon surface, a titanium nitride barrier layer having a surface of (111) crystallographic orientation. The process comprises: depositing a first titanium layer over a silicon surface; sputtering a titanium nitride layer over the titanium layer; depositing a second titanium layer over the sputtered titanium nitride layer; and then annealing the structure in the presence of a nitrogen-bearing gas, and in the absence of an oxygen-bearing gas, to form the desired titanium nitride having a surface of (111) crystallographic orientation and a sufficient thickness to provide protection of the underlying silicon against spiking of the aluminum. When an aluminum layer is subsequently formed over the (111) oriented titanium nitride surface, the aluminum will then assume the same (111) crystallographic orientation, resulting in an aluminum layer having enhanced resistance to electromigration.
REFERENCES:
patent: 4379832 (1983-04-01), Dalal et al.
patent: 4545115 (1985-10-01), Bauer et al.
patent: 4585517 (1986-04-01), Stemple
patent: 4629635 (1986-12-01), Brors
patent: 4657628 (1987-04-01), Holloway et al.
patent: 4676866 (1987-06-01), Tang et al.
patent: 4687542 (1987-08-01), Davis et al.
patent: 4785962 (1988-11-01), Toshima
patent: 4836905 (1989-06-01), Davis et al.
patent: 4847111 (1989-07-01), Chow et al.
patent: 4855798 (1989-08-01), Imamura et al.
patent: 5049975 (1991-09-01), Ajika et al.
Adams, E. D., et al., "Formation of TiSi.sub.2 and TiN during Nitrogen Annealing of Magnetron Sputtered Ti Films", Journal of Vacuum Science Technology, vol. A 3(6), Nov./Dec., 1985, pp. 2264-2267.
Alperin, Michael E., et al., "Development of the Self-Aligned Titanium Silicide Process for VLSI Applications", IEEE Transactions on Electron Devices, vol. ED-32, No. 2, Feb. 1985, pp. 141-149.
Bomchil, G., et al., "Influence of Oxygen on the Formation of Refractory Metal Silicides", Thin Solid Films, vol. 140, 1986, pp. 59-70.
Morgan, A. E., et al., "Formation of Titanium Nitride/Silicide Bilayers by Rapid Thermal Anneal in Nitrogen", Rapid Thermal Processing, Pittsburgh, Pa.: Publ. Mater. Res. Soc., 1986, pp. 279-287.
Okamoto, Tatsuo, et al., "Titanium Silicidation by Halogen Lamp Annealing", J. Appl. Phys., vol. 57, No. 12, Jun. 15, 1985, pp. 5251-5255.
Shatas, Steven C., "Heatpulse Rapid Thermal Processing for Annealing Refractory Metal Silicides", Workshop on Refractory Metal Silicides for VLSI, San Juan Bautista, Calif., Sep. 20-22, 1983.
Tang, Thomas E., et al., "Titanium Nitride Local Interconnect Technology for VLSI", IEEE Transactions on Electron Devices, vol. ED-34, No. 3, Mar. 1987, pp. 682-688.
Ting, C. Y., "TiN Formed by Evaporation as a Diffusion Barrier Between Al and Si", J. Vac. Sci. Technol., vol. 21, No. 1, May/Jun. 1982, pp. 14-18.
Tsukamoto, K., et al., "Self-Aligned Titanium Silicidation of Submicron MOS Devices by Rapid Lamp Annealing", IEDM 84, 1984, pp. 130-133.
Ngan Kenny K.
Nulman Jaim
Applied Materials Inc.
Maples John S.
Taylor John P.
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