Method for the formation of diffusion barrier

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S628000, C438S643000, C438S644000, C438S653000, C438S654000, C438S687000

Reexamination Certificate

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06887781

ABSTRACT:
Electronic components such as semiconductor wafer VLSI and ULSI integrated circuit devices are provided having a robust barrier layer in the device interconnects. The robust barrier layer provides excellent step coverage, low resistance and enhanced adhesion to CVD copper and the interconnect has a double structure of a layer of a barrier material and a metal layer thereon. The metal layer is preferably tungsten and is formed by replacing silicon or other such atoms on the surface of the barrier layer with tungsten metal. A layer of silicon can be formed on the barrier layer, silicon atoms can be formed on the surface by reacting the barrier layer with a silicon containing reactant or a silicon containing barrier layer can be used.

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