Method for the flattening treatment of silicon single crystal su

Details Method for the flattening treatment of silicon single crystal su Method for the flattening treatment of silicon single crystal su

1996-03-13

1999-01-19

Goodrow, John

Etching a substrate: processes

Etching of semiconductor material to produce an article...

438694, 438697, H01L 2100

Patent

active

058611029

ABSTRACT:
A semiconductor silicon single crystal wafer having a flat surface plane in a crystallographic orientation slightly deviated from the (001) axis was subjected to an oxidation treatment to form an oxidized surface film to such an extent that ordered stepwise level differences are formed in the interface between the oxidized surface film and the silicon surface followed by removal of the oxidized surface film with a hydrofluoric acid solution containing hydrogen chloride and having a pH not higher than 1 in such a fashion that the oxidized surface film is dissolved away by dipping the wafer in the acid solution while keeping equivalency relative to each of the stepwise level differences so that the wafer surface can be concurrently cleaned and flattened in an atomic level as evidenced by the scanning tunneling microscopic photographs.

REFERENCES:
patent: 4430150 (1984-02-01), Levine et al.
patent: 5609682 (1997-03-01), Sato et al.

Affiliated with

Also associated with

Rating

Method for the flattening treatment of silicon single crystal su does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for the flattening treatment of silicon single crystal su, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for the flattening treatment of silicon single crystal su will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1244498