Method for the fabrication of electrostatic microswitches

Details Method for the fabrication of electrostatic microswitches Method for the fabrication of electrostatic microswitches

1994-06-29

1996-02-06

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437901, 437927, 437921, H01L 21465

Patent

active

054895561

ABSTRACT:
A method for fabricating an electrostatic microswitch has the steps of depositing a silicon nitride layer over a silicon substrate with an opening therethrough to expose the planned sacrificial layer region; oxidation to form a silicon dioxide sacrificial layer; phosphorus ion implantation into the sacrificial layer; forming a phosphorus-doped polysilicon microbeam of the microswitch and its electrode contacts; lateral etching all of the silicon dioxide sacrificial layer in buffered hydrofluoric acid to form an air gap between the microbeam and the substrate; rinsing the structure in DI water, and then in methanol; and drying the structure by a warm nitrogen flow.

REFERENCES:
patent: 4744863 (1988-05-01), Guckel et al.
patent: 4975390 (1990-12-01), Fujii et al.
patent: 5164339 (1992-11-01), Gimpelson

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