Method for the fabrication of a semiconductor device

Details Method for the fabrication of a semiconductor device Method for the fabrication of a semiconductor device

1996-11-07

1998-07-21

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438763, 438778, 438782, 438624, 438626, H01L 2131

Patent

active

057834997

ABSTRACT:
A structure of double level metal free of voids is fabricated by depositing an insulating layer on the planarized layer which results from the growth of selective oxide layers to the thickness of the first metal wirings in the presence of the photoresist film patterns that are used to form the first metal wirings on the lower oxide layer. In addition, a patterning step for a second metal layer deposited on the insulating layer can be carried out with ease by virtue of the planarized layer of the first metal wirings, giving rise to a significant increase in the production yield. Thus, it can be usefully applied for ultra large scale integration devices, which are under a design rule of less than 0.4 .mu.m.

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