Method for the epitaxial growth of boron phosphorous semiconduct

Details Method for the epitaxial growth of boron phosphorous semiconduct Method for the epitaxial growth of boron phosphorous semiconduct

1980-02-13

1981-10-06

Bernstein, Hiram

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156613, C30B 2510

Patent

active

042933706

ABSTRACT:
The epitaxial growth of boron-phosphorous semiconductors can be accomplished by chemically reacting the gas materials diborane and phosphorous trichloride. The preferable temperature of the substrate in 880.degree. C.-1,110.degree. C. and the preferable ratio of the phosphorous trichloride to diborane in mol is 2-200. Use is made of a composite substrate.

REFERENCES:
patent: 3218205 (1965-11-01), Ruchuwein
patent: 3721573 (1973-03-01), Hays et al.
patent: 3877060 (1975-04-01), Shono et al.

Affiliated with

Also associated with

Rating

Method for the epitaxial growth of boron phosphorous semiconduct does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for the epitaxial growth of boron phosphorous semiconduct, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for the epitaxial growth of boron phosphorous semiconduct will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1205117