Method for the deposition of diamond film by high density direct

Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma

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427249, 427122, 118723HC, 118724, 423446, 428408, B05D 306, C23C 1626

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active

054766931

ABSTRACT:
There is disclosed a method for depositing a diamond film on a substrate which utilizes high density direct current glow discharge at a glow-arc transition region to form plasma between a cathode and an anode in a reactor, wherein the cathode maintains its temperature at a range of 2,100 to 2,300.degree. C. and is composed of a plurality of U-shaped filaments which are aligned parallel to one another to form an array and each of which is made by bending a conductive wire.

REFERENCES:
patent: 5007373 (1991-04-01), Legg et al.
patent: 5169452 (1992-12-01), Nakayama et al.
"Growth of Diamond Thin Films by de Plasma Chemical Vapor Deposition and Characteristics of the Plasma", Kazuhiro Suzuki et al., Jap. J. Appl. Phys., vol. 29, 1990, p. 153.
"Diamond Synthesis by DC Plasma CVD Method", K. Suzuki et al., Surface Technology, 42 (1991), p. 1197.
"Aspects of Diamond Deposition by Anomalous Pulsed D.C. Glow-Discharge-Activated Chemical Vapor Deposition", D. Satrapa et al., Surface and Coatings Technology, 47 (1991), pp. 59-68.
"Investigation of Rotating D.C. Discharge for Diamond Deposition", M. Nesladek, Diamond and Relationed Materials, 2, (1993), pp. 357-360.
Proceedings of the Second International Conference, "New Diamond Science and Technology", Russell Messier et al., Sep. 23-27, 1990, pp. 443-449.

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