Method for the crucible-free floating zone pulling of semiconduc

Details Method for the crucible-free floating zone pulling of semiconduc Method for the crucible-free floating zone pulling of semiconduc

1988-12-08

1989-07-25

Leung, Philip H.

Electric heating

Metal heating

Of cylinders

219 1079, 15662073, 336232, H05B 644, C30B 1514

Patent

active

048516287

ABSTRACT:
A method for pulling silicon semiconductor rods, in particular having diaers of 10cm and over. The current methods of crucible-free float zoning or float zone pulling can be markedly improved if the molten cap like zone which develops is forced inwardly in the growth process. This is accomplished with the aid of electromagnetic forces in an annular zone situated opposite the coil slot. The electromagnetic forces can be achieved by using induction heating coils whose coil surface facing the molten cap is provided with annular segments whose thickness increases from their inner periphery ouotwardly and which are disposed opposite the coil slot above the peripheral region of the molten cap.

REFERENCES:
patent: 3096158 (1963-07-01), Gaule et al.
patent: 3601569 (1971-08-01), Keller
patent: 4749837 (1988-06-01), von Ammon et al.
patent: 4797525 (1989-01-01), Keller

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