Method for the collective chemical cutting out of semiconductor

Details Method for the collective chemical cutting out of semiconductor Method for the collective chemical cutting out of semiconductor

1987-12-29

1989-03-07

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156649, 156651, 156656, 156657, 1566591, 156662, 357 15, 357 65, 437177, 437226, H01L 2906, H01L 21306, C23F 102, C03C 1500

Patent

active

048110795

ABSTRACT:
The invention provides a method for cutting out very small sized semiconductor devices, mounted on a gold base, including the formation of depth indicators etched through the active layer, on a manufacturing wafer, and penetrating into the substrate, said indicators being metallized then, after masking, the gold bases are deposited. A mechanical metal support makes it possible to thin down the substrate and to etch the mesa diodes on their gold bases, the metal of the mechanical support then being etched by an acid solution which cuts out the diodes.

REFERENCES:
patent: 3288662 (1966-11-01), Weisberg
patent: 3973320 (1976-08-01), Greco et al.
patent: 4029542 (1977-06-01), Swartz
patent: 4304043 (1981-12-01), Gamo et al.
patent: 4499659 (1985-02-01), Varteresian et al.
Journal of The Electrochemical Society, vol. 124, No. 9, Sep. 1977, pp. 1462-1463, Manchester, N.Y., US; B. M. Armstrong et al.: "A Technique for Fabricating Oxide Passivated BARITT Diodes".

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