Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-09-26
2006-09-26
Kebede, Brook (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C977S721000
Reexamination Certificate
active
07112525
ABSTRACT:
The present invention provides a method for the synthesis of nanowires in a silicon nanoporous template by electrodeposition and a novel technique for the integration of nanowires to transduction surfaces. In accordance with the present invention, a method for the fabrication of nanowire interconnects is provided. The method includes the steps of fabricating substantially vertical nanowires in a selectively passivated nanoporous silicon template, backetching the silicon template to expose the nanowires, eutectically bonding the exposed nanowires to a receiving silicon wafer, and etching the silicon template to produce substantially freestanding nanowire interconnects in contact with the receiving silicon wafer.
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Aravamudhan Shyam
Bhansali Shekhar
Kedia Sunny
Luongo Kevin
Kebede Brook
Sauter Molly L.
Smith & Hopen , P.A.
University of South Florida
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