Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Patent
1994-05-02
1996-01-02
Powell, William
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
216 77, 252 791, C23F 100
Patent
active
054800510
ABSTRACT:
Aluminiferous structures having a sidewall angle greater than or equal to zero are produced by the addition of a volatile hydrocarbon to the etching gas mixture in a plasma etching process. The volatile hydrocarbon promotes the sidewall passivation, so that extremely fine structures can be anisotropically etched. Given aluminum-copper alloys, moreover, the formation of etching residues that contain copper and are not easily volatilized is also prevented.
REFERENCES:
patent: 4855016 (1989-08-01), Jucha et al.
patent: 4919748 (1990-04-01), Bredbenner et al.
patent: 4925813 (1990-05-01), Autier et al.
patent: 5068007 (1991-11-01), Rogers et al.
patent: 5277750 (1994-01-01), Frank
Kimizuka et al, Pattern profile control in magnetron reactive ion etching of poly-Si, J. Vac Sci. Technol. B, vol. 10, No. 5, pp. 2192-2196 (1992).
Lutze et al, Anisotropic Reactive Ion Etching of Aluminum Using Cl.sub.2, BCl.sub.3 and CH.sub.4 Gases, J. Electrochem. Soc., vol. 137, No. 1, pp. 249-252 (1990).
Riley et al, Plasma Etching of Aluminum for ULSI Circuits, Solid State Technology, pp. 47-55 (Feb. 1993).
Powell William
Siemens Aktiengesellschaft
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