Method for the accelerated growth from the gaseous phase of crys

Details Method for the accelerated growth from the gaseous phase of crys Method for the accelerated growth from the gaseous phase of crys

1977-01-27

1979-10-30

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG70, B01J 1726

Patent

active

041727568

ABSTRACT:
A method of growing gallium arsenide crystals obtained by reaction of a first gaseous phase containing hydrogen and arsenic trichloride and a liquid gallium phase, in which the reaction forms a second gaseous phase from which gallium arsenide is deposited in such circumstances that the molar fraction of arsenic trichloride is larger than 2.times.10.sup.-2 and is preferably between 2.times.10.sup.-2 and 10.sup.-1.

REFERENCES:
patent: T951008 (1976-10-01), Regh
patent: 3471324 (1969-10-01), Wilson et al.
patent: 3476592 (1969-11-01), Berkenblit et al.
patent: 3893876 (1975-07-01), Akai et al.
patent: 3975218 (1976-08-01), Ruehrwein
patent: 4007074 (1977-02-01), Ogirima

Affiliated with

Also associated with

Rating

Method for the accelerated growth from the gaseous phase of crys does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for the accelerated growth from the gaseous phase of crys, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for the accelerated growth from the gaseous phase of crys will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-18978