Method for testing standby current of semiconductor package

Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element

Reexamination Certificate

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Details

C324S763010, C324S1540PB, C324S754090, C438S015000, C438S018000

Reexamination Certificate

active

11335270

ABSTRACT:
A system and method for testing standby current of a semiconductor package is provided. The method includes testing semiconductor chips formed on a wafer having a predetermined wafer run number, collecting measured values of standby current of the semiconductor chips, and storing the measured values of standby current in a database, by using a wafer tester; recognizing a wafer run number of each of semiconductor packages to be tested; downloading measured values of standby current of semiconductor chips corresponding to the recognized wafer run number from the database to a semiconductor package tester; extracting a boundary value defining predetermined upper values of the downloaded measured values of standby current, by using the semiconductor package tester; setting the boundary value as a standby current limit of a program for testing the semiconductor packages by use of the semiconductor package tester; and testing the semiconductor packages based on the standby current limit.

REFERENCES:
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patent: 6175245 (2001-01-01), Bowe et al.
patent: 6593590 (2003-07-01), Yang et al.
patent: 6830941 (2004-12-01), Lin et al.
patent: 2002/0189981 (2002-12-01), Beffa
patent: 10-090346 (1998-04-01), None
patent: 10-206499 (1998-08-01), None
patent: 2003-043099 (2003-02-01), None
patent: 2000-0002076 (2000-01-01), None
English language abstract of Korean Publication No. 2000-0002076.
English language abstract of Japan Publication No. 10-090346.
English language abstract of Japan Publication No. 10-206499.

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