Method for testing semiconductor memory device using probe...

Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element

Reexamination Certificate

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Reexamination Certificate

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07863914

ABSTRACT:
Example embodiments relate to a semiconductor memory device including a first pad having a probe region and a sensing region, the first pad may be adapted to come in contact with a primary probe, a sensing unit adapted to sense a weak contact of the first pad and the primary probe, the sensing unit may generate an output current in response to a contact point of the primary probe, and a second pad may be adapted to come in contact with a secondary probe to input/output an electric signal. The output current of the sensing unit may be output through the second pad or the secondary probe.

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