Semiconductor device manufacturing: process – With measuring or testing – Electrical characteristic sensed
Patent
1998-03-24
1999-06-15
Bowers, Charles
Semiconductor device manufacturing: process
With measuring or testing
Electrical characteristic sensed
438 14, 438 17, 438682, H01L 2166
Patent
active
059131063
ABSTRACT:
A resistor protect mask is used on a shallow trench isolation device junction to cover a device area except for a strip on the perimeter of the device area. The silicide layer formed on the central surface portion of the device and the strip area on the perimeter of the device upon which silicide formation is prevented forms a test structure for evaluation of junction formation that is immune from the effects of silicide formation on a device trench sidewall. Electrical tests and leakage measurements upon the test structure are compared directly to similar silicide shallow trench isolated devices which do not incorporate the resistor protect mask and shallow trench isolated devices without silicide to determine whether salicide processing is a cause of junction effects including junction leakage and short-circuiting.
REFERENCES:
patent: 4144493 (1979-03-01), Lee et al.
patent: 5504354 (1996-04-01), Mohsen
patent: 5629544 (1997-05-01), Voldman et al.
patent: 5670891 (1997-09-01), Lee et al.
Girard P. et al, "Low Leakage Current Evaluations For Process Characterizatins", Proceedings of the European Solid State Device Research Converence, Nottingham, Sep. 10-13, 1990, NR. Conf. 20, pp. 197-200.
IBM Technical Disclosure Bulletin, vol. 30, No. 5, Oct. 1, 1987, pp. 385-386 "Monitor for Assurance of Trench Channel Stop Doping".
Dawson Robert
Hause Frederick N.
May Charles E.
Advanced Micro Devices , Inc.
Bowers Charles
Koestner Ken J.
Sulsky Martin
LandOfFree
Method for testing junction leakage of salicided devices fabrica does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for testing junction leakage of salicided devices fabrica, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for testing junction leakage of salicided devices fabrica will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-409753