Method for testing electrical properties of silicon single cryst

Details Method for testing electrical properties of silicon single cryst Method for testing electrical properties of silicon single cryst

1994-05-05

1996-07-09

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

437 8, 437 10, 148DIG60, 148DIG162, 117932, H01L 21306

Patent

active

055341128

ABSTRACT:
The evaluation of the oxide film dielectric breakdown voltage of a silicon semiconductor single crystal is caried out by cutting a wafer out of the single crystal rod, etching the surface of the wafer with the mixed solution of hydrofluoric acid and nitric acid thereby relieving the wafer of strain, then etching the surface of the wafer with the mixed solution of K.sub.2 Cr.sub.2 O.sub.7, hydrofluoric acid, and water thereby inducing occurrence of pits and scale-like patterns on the surface, determining the density of the scale-like patterns, and computing the oxide film dielectric breakdown voltage by making use of the correlating between the density of scale-like patterns and the oxide film dielectric breakdown voltage. This fact established the method of this invention to be capable of effecting an evaluation equivalent to the evaluation of the oxide film dielectric breakdown voltage of a PW wafer prepared from the single crystal rod.

REFERENCES:
patent: 3997368 (1976-12-01), Petroff et al.
patent: 4539050 (1985-09-01), Kramler et al.
patent: 4787997 (1988-11-01), Saito et al.
patent: 4956153 (1990-09-01), Yamagishi et al.
patent: 5386796 (1995-02-01), Fusegawa et al.
d'Aragena, "Dislocation Etch for (100) Planes in Silicon", J. Electrochen Soc. Solid State Science and Technology Jul. 1972 pp. 948-950.
Ghandhi, VLSI Fabrication Principles, Silicon and Gellium Arsenide, John Wiley & Sons, New York 1983 pp. 479-482 and 517-520.
Ehara Y., et al., "Correlation Between Discharge Magnitude Distribution and Luminescence Distribution Due to Electrical Treeing", Conference on Electrical Insulation and Dielectric Phenomena, 31-Oct.-1990, pp. 313-318.

Affiliated with

Also associated with

Rating

Method for testing electrical properties of silicon single cryst does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for testing electrical properties of silicon single cryst, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for testing electrical properties of silicon single cryst will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1864738