Semiconductor device manufacturing: process – With measuring or testing
Reexamination Certificate
2004-10-20
2008-05-06
Lindsay, Jr., Walter (Department: 2812)
Semiconductor device manufacturing: process
With measuring or testing
C438S663000, C438S584000, C257SE21324, C257SE21497
Reexamination Certificate
active
07368303
ABSTRACT:
A method is disclosed for a multi-zone interference correction processing for a rapid thermal processing (RTP) system. This processing allows for improved calibration/tuning of RTP systems by accounting for zone coupling. The disclosed method includes establishing baseline characteristic data and zone characteristic data, and then using the baseline and zone characteristic data to determine lamp-control parameters, such as temperature offset values, for temperature sensors of the RTP system. The baseline characteristic data includes information regarding baseline heating uniformity of an RTP system. The zone characteristic data is collected for a plurality of heating zones within the heating chamber of the RTP system, each zone being associated with a respective temperature probe. The zone characteristic data is collected based on controlled temperature sensor variations. The lamp-control parameters for temperature probes of the RTP system are then calculated based on the baseline characteristic data and the zone characteristic data.
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Chen Cheng Wei
Du Yu-Lin
Huang Jian-Hua
Wang Shi-Ming
You Wei-Ming
Baker & McKenzie LLP
Lindsay, Jr. Walter
Mustaph Abdulfattah
Taiwan Semiconductor Manufacturing Company , Ltd.
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