Method for tantalum pentoxide moisture barrier in film...

Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering

Reexamination Certificate

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C204S192220, C427S101000, C427S103000

Reexamination Certificate

active

09829169

ABSTRACT:
The present invention discloses a method of manufacturing a thin film resistor with a moisture barrier by depositing a metal film layer on a substrate and depositing a layer of tantalum pentoxide film overlaying the metal film layer. The present invention also includes a thin film resistor having a substrate; a metal film layer attached to the substrate; and a tantalum pentoxide layer overlaying the metal film layer, the tantalum pentoxide layer providing a barrier to moisture, the tantalum pentoxide layer not overlaid by an oxidation process.

REFERENCES:
patent: 3878079 (1975-04-01), Schauer
patent: 4002542 (1977-01-01), Young
patent: 4019168 (1977-04-01), Collins
patent: 4161431 (1979-07-01), Matsunaga et al.
patent: 4217570 (1980-08-01), Holmes
patent: 4288776 (1981-09-01), Holmes
patent: 4539434 (1985-09-01), Krause
patent: 4617575 (1986-10-01), Fuyama et al.
patent: 4705697 (1987-11-01), Nishiguchi et al.
patent: 4708915 (1987-11-01), Ogawa et al.
patent: 4725859 (1988-02-01), Shibata et al.
patent: 4734709 (1988-03-01), Kobayashi et al.
patent: 4777583 (1988-10-01), Minami et al.
patent: 4837550 (1989-06-01), Plough, Jr.
patent: 4952904 (1990-08-01), Johnson et al.
patent: 4965594 (1990-10-01), Komuro
patent: 5076906 (1991-12-01), DerMarderosian, Jr.
patent: 5798684 (1998-08-01), Endo et al.
patent: 5940110 (1999-08-01), Nakamura et al.
patent: 6353381 (2002-03-01), Dietmann et al.
patent: 2001/0017770 (2001-08-01), Copetti et al.
patent: 2002/0084885 (2002-07-01), Weinand et al.
patent: 1022075-X (1966-03-01), None
patent: 52-3196 (1977-01-01), None
patent: 52003196 (1977-01-01), None
patent: 55050221 (1980-04-01), None
patent: 59-26277 (1984-02-01), None
patent: 61-27264 (1986-02-01), None
patent: 01133755-X (1989-05-01), None
patent: 01291401-X (1989-11-01), None
patent: 07153603-X (1995-06-01), None
S. Seki, T. Unagami, and B. Tsujiyama, Electrical Characteristics of the RF Magnetron-Sputtered Tantalum Pentoxide-Silicon Interface, J. Elcetrochem. Soc.: Solid-State Science and Technology, vol. 131, No. 11, Nov. 1984.
H. Hoo, W.Xiong, P. McDonald, R. Raman, P. Gilman, Proceedings of Sony Research Forum, 1998.
J. Licari, L. Enlow, Hybrid Microcircuit Technology Handbook, p. 62, 1988.

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