Method for tailoring oxygen precipitate particle density and dis

Details Method for tailoring oxygen precipitate particle density and dis Method for tailoring oxygen precipitate particle density and dis

1982-03-26

1984-03-20

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG73, 148187, 148188, H01L 21322, H01L 21324

Patent

active

044379226

ABSTRACT:
A wide precipitate-free-zone (PFZ) is formed at the surface of a semiconductor substrate and at the same time a high density of oxygen precipitate particles are produced beneath at the surface PFZ by a two step annealing process involving a first cycle of very rapidly heating the wafers to a first high temperature and a second cycle of very slowly heating the wafers to a second high temperature.

REFERENCES:
patent: 3615873 (1971-10-01), Sluss, Jr. et al.
patent: 3723053 (1973-03-01), Myers et al.
patent: 3929443 (1975-12-01), Leuenberger et al.
patent: 4144099 (1979-03-01), Edmonds et al.
patent: 4193783 (1980-03-01), Matsushita
patent: 4314595 (1982-02-01), Yamamoto et al.
patent: 4344815 (1982-08-01), Cazarra et al.
L. E. Katz et al., High Oxygen Czochralski Silicon Crystal Growth Relationship to Epitaxial Stacking Faults, J. Electrochem. Soc., Solid-State Science and Technology, Jul. 1978, pp. 1151-1155.
IBM TDB "Producing Silicon Semiconductor Wafers with a High Internal Getter Density and a Surface Layer Free from Lattice Defects", by E. Biedermann, vol. 19, No. 4, Sep. 1976, p. 1295.
"Influence of Precipitate Size and Capillarity Effects on the Surface Denuded Zone in Thermally Processed Cz-Silicon Wafers", by R. W. Series et al., Semiconductor Silicon Electro-Chemical Society, 1981, pp. 304-312.
"Denuded Zone and Microdefect Formation in Czochralsky-Growth Silicon Wafers by Thermal Annealing", by K. Kugimiya et al., Semiconductor Silicon Electro-Chemical Society, 1981, pp. 294, 303.
"The Nucleation and Growth of Oxide Precipitates in Silicon", by H. F. Schaake et al., Semiconductor Silicon Electro-Chemical Society, 1981, pp. 273-281.
IBM TDB "Gettering By Oxygen Precipitation", by S. M. Hu et al., vol. 19, No. 12, May 1977, pp. 4618-4619.

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