Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Reexamination Certificate
2008-08-27
2010-06-29
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
C438S172000, C438S216000, C438S261000, C438S421000, C438S591000, C438S595000, C257SE29246
Reexamination Certificate
active
07745272
ABSTRACT:
A semiconductor device has a heterostructure including a first layer of semiconductor oxide material. A second layer of semiconductor oxide material is formed on the first layer of semiconductor oxide material such that a two dimensional electron gas builds up at an interface between the first and second materials. A passivation layer on the outer surface stabilizes the structure. The device also has a source contact and a drain contact.
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Peter Kiesel
Schmidt Oliver
Van de Walle Christian G.
Duong Khanh B
Marger & Johnson & McCollom, P.C.
Palo Alto Research Center Incorporated
Smith Zandra
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