Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2008-06-20
2010-11-23
Lebentritt, Michael S (Department: 2829)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S705000, C438S726000, C438S743000, C438S762000, C438S795000, C257SE21104, C257SE21224, C257SE21228, C257SE21347, C257SE21485
Reexamination Certificate
active
07838431
ABSTRACT:
Methods and apparatus for processing a substrate are provided herein. In some embodiments, a method of processing a substrate may include providing a substrate having at least one of a defect or a contaminant disposed on or near a surface of the substrate; and selectively annealing a portion of the substrate with a laser beam in the presence of a process gas comprising hydrogen. The laser beam may be moved over the substrate or continuously, or in a stepwise fashion. The laser beam may be applied in a continuous wave or pulsed mode. The process gas may further comprise an inert gas, such as, at least one of helium, argon, or nitrogen. A layer of material may be subsequently deposited atop the annealed substrate.
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International Search Report and Written Opinion mailed Jan. 21, 2010 for PCT Application No. PCT/US2009/047038.
Applied Materials Inc.
Lebentritt Michael S
Moser IP Law Group
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