Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Having heterojunction
Reexamination Certificate
2005-05-10
2005-05-10
Wilson, Allan R. (Department: 2815)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Having heterojunction
C257S522000, C257S758000, C438S411000, C438S619000
Reexamination Certificate
active
06890828
ABSTRACT:
A method for forming interlevel dielectric levels in a multilevel interconnect structure formed by a damascene process. The conductive features characteristic of the damascene process are formed in a removable mandrel material for each level of the interconnect structure. In at least one level, a portion of the mandrel material underlying the bond pad is clad on all sides with the metal forming the conductive features to define a support pillar. After all levels of the interconnect structure are formed, the mandrel material surrounding the conductive features is removed to leave air-filled voids that operate as an interlevel dielectric. The support pillar is impermeable to the etchant such that mandrel material and metal inside the support pillar is retained. The support pillar braces the bond pad against vertical mechanical forces applied by, for example, probing or wire bonding and thereby reduces the likelihood of related damage to the interconnect structure.
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Horak David Vaclav
Koburger III Charles William
Mitchell Peter H.
Nesbit Larry Alan
International Business Machines - Corporation
Ortiz Edgardo
Wilson Allan R.
Wood Herron & Evans LLP
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