Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Patent
1998-05-06
2000-12-19
Young, Christopher G.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
430313, 430316, 430318, G03C 500
Patent
active
061625868
ABSTRACT:
Disclosed is a method for making a metallization layered stack over an oxide layer of a semiconductor substrate, and a metallization layered stack that assists in providing superior deep UV photolithography resolution. The method includes forming a bottom titanium nitride layer over the oxide layer, and forming an aluminum metallization layer over the bottom titanium nitride layer. The method further includes forming a top titanium nitride layer over the aluminum metallization layer, such that the forming of the top titanium nitride layer includes: (a) placing the semiconductor substrate in an ionized metal plasma chamber having an RF powered coil and a titanium target; (b) introducing an argon gas and a nitrogen gas into the ionized metal plasma chamber; (c) pressuring up the ionized metal plasma chamber to a pressure of between about 10 mTorr and about 50 mTorr, whereby the top titanium nitride layer is formed as a dense titanium nitride film.
REFERENCES:
patent: 4820611 (1989-04-01), Arnold, III et al.
patent: 5192697 (1993-03-01), Leong
patent: 5302551 (1994-04-01), Iranmanesh
patent: 5306952 (1994-04-01), Matsuura et al.
patent: 5582881 (1996-12-01), Besser et al.
patent: 5635763 (1997-06-01), Inoue et al.
patent: 5686356 (1997-11-01), Jain et al.
patent: 5702870 (1997-12-01), Brugge
patent: 5743998 (1998-04-01), Park
patent: 5757060 (1998-05-01), Lee et al.
patent: 5759916 (1998-06-01), Hsu et al.
patent: 5858879 (1999-01-01), Chao et al.
patent: 5882399 (1999-03-01), Ngan et al.
patent: 5925225 (1999-07-01), Ngan et al.
McKenzie, McFall and Yin, "Production of dense and oriented structures including titanium nitride by energetic condensation from plasmas", Nov. 4, 1995, Elsevier Science, University of Sydney, Sydney, Australia.
Jacobson, Luzzi, Heinz and Iwaki, "Beam-Solid Interactions for Materials Synthesis and Characterization", 1995, vol. 354, pp. 503-510, Materials Research Society Symposium Proceedings, Pittsburgh, PA.
Rossnagel and Hopwood, "Metal ion deposition from ionized mangetron sputtering discharge" Jan./Feb. 1994, J. Vac. Sci. Tech. B 12(1), pp. 449-453, IBM Research, New York.
J. Stimmell, "Properties of dc magnetron reactively sputtered TiN", Aug. 7, 1986, J. Vac. Sci. Tech. B 4 (6), pp. 1377-1382, National Semiconductor, Santa Clara, CA.
Kawamura, Abe, Yanagisawa and Sasaki, "Characterization of TiN films by a conventional magnetron sputtering system: influence of nitrogen flow percentage and electrical properties", Jan. 17, 1996, Elsevier Science, pp. 115-119, Kitami, Japan.
Atwater, Dickinson, Lowndes, and Polman, "Film Synthesis and Growth Using Energetic Beams", Apr. 17-20, 1995, Mat. Res. Soc. Symp. Proc. vol. 388, pp. 103-108, San Francisco, CA.
Hara, Yamanoue, Iio, Inoue, Washidzu and Nakamura, "Properties of Titanium Nitride Films for Barrier Metal in Aluminum Ohmic Contact Systems", Jul. 7, 1991, vol. 30, No. 7, pp. 1447-1451, Hosei University, Tokyo, Japan.
Rossnagel, Nichols, Hamaguchi, Ruzic, and Turkot, "Thin, high atomic weight refractory film deposition for diffusion barrier, adhesion layer, and seed layer applications", May/Jun. 1996, J. Vac. Sci. Tech. B 14(3), pp. 1819-1827, Yorktown Heights, New York.
Extended Abstract of the Electrochemical Society Spring Meeting, Los Angeles, California, May 1996, ECS, Pennington, New Jersey.
Abstract, "Application of Surface Reformed Thick Spin-On-Glass to MOS Device Planarization", Soc., vol. 137, No. 4, Apr. 1990, The Electrochemical Society.
S.J. Holmes, P.H. Mitchell and M.C. Hakey, "Manufacturing with DUV Lithography", IBM Journal of Research & Development, vol. 41, No. 1/2 Optical lithography, 1997 IBM.
H. Ito, "Chemical amplification resists: History and development within IBM", IBM Journal of Research & Development, vol. 41, No. 1/2 Optical lithography, 1997 IBM.
Baker Daniel C.
Bothra Subhas
Sengupta Samit S.
Philips Electronics North America Corp.
Young Christopher G.
LandOfFree
Method for substantially preventing footings in chemically ampli does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for substantially preventing footings in chemically ampli, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for substantially preventing footings in chemically ampli will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-269906