Method for structuring a copper and/or permalloy layer by means

Details Method for structuring a copper and/or permalloy layer by means Method for structuring a copper and/or permalloy layer by means

1988-06-06

1989-06-13

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156652, 156656, 1566591, 156904, 20419234, 20419235, B44C 122, C03C 1500, C03C 2506, C23F 102

Patent

active

048389943

ABSTRACT:
A copper and/or permalloy layer is structured by means of dry etching. A layer of tantalum is applied as a mask to a layer to be structured, and a photoresist layer is applied to the tantalum layer. Subsequently, the structure of the photoresist layer generated in a photolithographic manner is transferred onto the mask by reactive ion etching. This procedure is continued until the copper or permalloy layer to be structured is exposed. The structuring of the copper or permalloy layer then occurs by ion beam etching.

REFERENCES:
patent: 4557796 (1985-12-01), Druschke et al.
IBM Technical Disclosure Bulletin, vol. 21, No. 10, Mar. 1979, "Method of Tapering TaAuTa Conductor Cross Section for Improved Magnetic Bubble Device Performance", by J. Ahn et al., pp. 4186 and 4187.
J. Vac. Sci. Technol., 17(6), Nov./Dec. 1980, "Surface Texturing of Copper by Sputter Etching with Applications for Solar Selective Absorbing Surfaces", by P. M. Curmi et al., pp. 1320 through 1325.

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