Method for stripping silicon nitride

Details Method for stripping silicon nitride Method for stripping silicon nitride

2008-01-29

2008-01-29

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

C438S691000, C438S745000, C438S757000

Reexamination Certificate

active

07323413

ABSTRACT:
An apparatus and a method for stripping silicon nitride are disclosed that facilitate automatic, real-time, and exact measurement of etch rate and an ending time of the etching process when silicon nitride is stripped with phosphoric acid solution. The method for stripping silicon nitride includes the steps of: a) measuring initial concentration of a specific ion in a phosphoric acid solution contained in a reactor, b) dipping a silicon nitride-formed substrate into the phosphoric acid solution in the reactor, c) measuring instantaneous concentration of the specific ion in stripping solution extracted from the reactor when silicon nitride stripping is processed in the reactor, and d) finishing the silicon nitride stripping process if variation rate of the measured instantaneous concentration is not exceeding a predetermined standard, or returning to the step c) if the variation rate is more than the predetermined standard.

REFERENCES:
patent: 2003/0075272 (2003-04-01), Ottow et al.

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