Method for stripping photoresist employing a hot hydrogen atmosp

Details Method for stripping photoresist employing a hot hydrogen atmosp Method for stripping photoresist employing a hot hydrogen atmosp

1995-01-17

1997-11-25

Lesmes, George F.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Removal of imaged layers

134 1, 134 19, 134 21, 134902, 1566461, 216 63, 216 64, 216 67, 216 74, 216 79, G03C 500, B08B 312, B08B 700, B44C 122

Patent

active

056911173

ABSTRACT:
It has been discovered that organic photoresists may be quickly, conveniently, and completely stripped using a hot hydrogen atmosphere. The substrates are preferably exposed to such atmosphere utilizing a hydrogen conveyor furnace. The gases from the furnace are burned to carbon dioxide and water thereby eliminating the need to dispose of a stripping agent.

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Stripping Today's Toughest Resists, Peters, vol. 15, No. 2.

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