Method for stacking semiconductor dies

Details Method for stacking semiconductor dies Method for stacking semiconductor dies

2011-08-02

2011-08-02

Smith, Bradley K (Department: 2894)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

C438S460000

Reexamination Certificate

active

07989318

ABSTRACT:
A system and method for stacking semiconductor dies is disclosed. A preferred embodiment comprises forming through-silicon vias through the wafer, protecting a rim edge of the wafer, and then removing the unprotected portions so that the rim edge has a greater thickness than the thinned wafer. This thickness helps the fragile wafer survive further transport and process steps. The rim edge is then preferably removed during singulation of the individual dies from the wafer.

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