Method for stacking semiconductor chips

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Details

C438S668000, C257S774000, C257S773000, C257S621000, C257S686000, C257SE23174, C257SE23145

Reexamination Certificate

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07547630

ABSTRACT:
In a semiconductor system (100) including a chip (101) and a workpiece (102), the chip has metal-filled vias (140) positioned between contact pads (120) and the respective edges (110). In addition, seals against microcracks (150) and thermo-mechanical stress (151) are located between the vias and the active components, and sometimes also between the vias and the respective nearest edge. Workpiece (102) may be another semiconductor chip or a substrate; it has contact pads (170) matching the locations of the vias (140). The chip is vertically stacked on the workpiece so that each contact pad (170) is aligned and in electrical contact with the corresponding via (140).

REFERENCES:
patent: 6608371 (2003-08-01), Kurashima et al.
patent: 6703689 (2004-03-01), Wada
patent: 7180149 (2007-02-01), Yamamoto et al.
patent: 7335972 (2008-02-01), Chanchani

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