Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-09-26
2009-06-16
Thai, Luan C (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S668000, C257S774000, C257S773000, C257S621000, C257S686000, C257SE23174, C257SE23145
Reexamination Certificate
active
07547630
ABSTRACT:
In a semiconductor system (100) including a chip (101) and a workpiece (102), the chip has metal-filled vias (140) positioned between contact pads (120) and the respective edges (110). In addition, seals against microcracks (150) and thermo-mechanical stress (151) are located between the vias and the active components, and sometimes also between the vias and the respective nearest edge. Workpiece (102) may be another semiconductor chip or a substrate; it has contact pads (170) matching the locations of the vias (140). The chip is vertically stacked on the workpiece so that each contact pad (170) is aligned and in electrical contact with the corresponding via (140).
REFERENCES:
patent: 6608371 (2003-08-01), Kurashima et al.
patent: 6703689 (2004-03-01), Wada
patent: 7180149 (2007-02-01), Yamamoto et al.
patent: 7335972 (2008-02-01), Chanchani
Brady III Wade J.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Thai Luan C
Tung Yingsheng
LandOfFree
Method for stacking semiconductor chips does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for stacking semiconductor chips, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for stacking semiconductor chips will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4079618