Method for stacking and interconnecting integrated circuits

Details Method for stacking and interconnecting integrated circuits Method for stacking and interconnecting integrated circuits

2009-11-24

2011-10-11

Lebentritt, Michael (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S109000, C257SE23067, C257SE23174

Reexamination Certificate

active

08034713

ABSTRACT:
A method for stacking and interconnecting integrated circuits includes providing at least two substrates; forming a trench in each substrate; filling the trench with an insulating material; forming, in each substrate, at least one conductive area; thinning each substrate until reaching at least the bottom of the trench, to obtain in each substrate at least one electrically insulated region within the closed perimeter delineated by the trench; bonding the substrates together; making at least one hole through the bonded substrates so that the hole passes at least partially through the conductive areas and passes through the insulated region of each substrate; and filling the hole with an electrically conductive material so as to obtain a conductive column that traverses the isolated region of each substrate and is in lateral electrical contact with the conductive areas.

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