Method for stabilizing polysilicon resistors

Details Method for stabilizing polysilicon resistors Method for stabilizing polysilicon resistors

1995-12-07

1998-11-17

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making passive device

Resistor

438239, 438385, 438513, 438798, H01L 2120

Patent

active

058375929

ABSTRACT:
A method for stabilizing a polysilicon resistor. Formed through a conventional method upon a semiconductor substrate is a polysilicon resistor. The polysilicon resistor is treated with a nitrogen plasma. After treatment with the nitrogen plasma, the polysilicon resistor exhibits a high and stable resistance having minimal susceptibility to variation due to intrusion of hydrogen or other reactive species into the polysilicon resistor.

REFERENCES:
patent: 4912065 (1990-03-01), Mizuno et al.
patent: 5013678 (1991-05-01), Winnerl et al
patent: 5356826 (1994-10-01), Natsume
patent: 5420053 (1995-05-01), Miyazaki
patent: 5518936 (1996-05-01), Yamamoto et al.

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