Method for stabilizing etching performance

Details Method for stabilizing etching performance Method for stabilizing etching performance

2007-10-09

2007-10-09

Ahmed, Shamim (Department: 1765)

Etching a substrate: processes

Gas phase etching of substrate

With measuring, testing, or inspecting

C216S060000, C216S067000, C216S058000, C438S710000, C438S734000

Reexamination Certificate

active

11430674

ABSTRACT:
The invention is directed to an etching method for patterning a first material layer over a second material layer to expose a portion of the second material layer. The etching method comprises steps of performing a first etching process to remove a portion of the first material layer in an etching chamber and then performing an etching environment adjustment process in the etching chamber. A second etching process is performed on the first material layer and, meanwhile, a real-time etching monitor process is performed for generating an endpoint detection spectrum subsequent to the etching environment adjustment process, wherein at least one of signals of the endpoint detection spectrum is stabilized by the inert gas plasma treatment.

REFERENCES:
patent: 5445712 (1995-08-01), Yanagida
patent: 5762813 (1998-06-01), Takiyama et al.
patent: 6383931 (2002-05-01), Flanner et al.
patent: 6417072 (2002-07-01), Coronel et al.
patent: 6818561 (2004-11-01), Sonderman
patent: 2004/0209477 (2004-10-01), Buxbaum et al.
patent: 2006/0046329 (2006-03-01), Kuisma et al.

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