Method for sputter depositing thin films

Details Method for sputter depositing thin films Method for sputter depositing thin films

1987-10-15

1989-05-30

Nguyen, Nam X.

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419212, C23C 1434

Patent

active

048348554

ABSTRACT:
A sputtering target has a sputtering surface with first and second regions of respective first and second materials. The first region comprises a surface of a first member of the first material, such as of a circular cobalt plate. The second region comprises a surface of a second member of the second material, such as a platinum ring. A cobalt cover ring clamps the platinum ring to the cobalt plate. By varying the relative sizes of the first and second regions, as by changing the size of the cover ring to expose more or less of the platinum ring, the concentration of the two materials in a layer deposited from the target onto substrates is varied. In addition, by imparting planetary motion to substrates during deposition and sizing and positioning the exposed portion of the platinum ring, a radial coercivity gradient is established in the layer deposited on the substrates.

REFERENCES:
patent: 3855612 (1974-12-01), Rosvold
patent: 4025410 (1977-05-01), Stewart
patent: 4260466 (1981-04-01), Shirahata et al.
patent: 4415427 (1983-11-01), Hidler et al.
patent: 4444635 (1984-04-01), Kobayashi et al.
patent: 4485000 (1984-11-01), Kawaguchi et al.
patent: 4558388 (1985-12-01), Graoes, Jr.
patent: 4626336 (1986-12-01), Bloomquist et al.
patent: 4650064 (1987-03-01), Slabaugh
Torr Vac Mode 4000, Specification #1,051, Apr. 1984.

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