Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Diffusing a dopant
Reexamination Certificate
2007-10-16
2007-10-16
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Diffusing a dopant
C257SE21144, C257SE21152, C257S461000
Reexamination Certificate
active
11270579
ABSTRACT:
In order to form a p-region in an InP-based photodiode, zinc doping must be performed. Due to the current trend toward the implementation of larger-sized InP wafers, there is a need for a solid phase diffusion method in which a ZnO thin film is applied to an epitaxial wafer, the wafer is heated, such that zinc is diffused from the ZnO thin film into the InP epitaxial layers. A mask having an upper layer made of a-Si is used as a diffusion mask. Since a-Si does not dissolve in hydrofluoric acid, the a-Si remains without dissolving when the ZnO is removed with hydrofluoric acid. Since the a-Si film remains, the edge of the pn junction is not exposed. The pn junction does not become degraded because the edge of the pn junction is covered and protected by the diffusion mask at all times.
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Baumeister B. William
Global IP Counselors, LLP
Sumitomo Electric Industries Ltd.
Yang Minchul
LandOfFree
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