Method for smoothing wafer surface and apparatus used therefor

Semiconductor device manufacturing: process – Chemical etching – Combined with coating step

Reexamination Certificate

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Details

C438S695000, C438S753000, C257SE21219, C257SE21220

Reexamination Certificate

active

07955982

ABSTRACT:
Disclosed is a method for smoothing the surface of at least one side of a wafer which is obtained by slicing a semiconductor ingot. In this method, a fluid is applied according to projections of the wafer surface, thereby reducing the projections. Alternatively, a fluid is applied over the wafer surface, thereby smoothing the entire surface of the wafer while reducing the projections in the wafer surface.

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English language Abstract of JP 11-135464 A.
Taiwan Office action, dated Feb. 1, 2011 along with an english translation thereof.

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