Method for smoothing surface of silicon single crystal substrate

Details Method for smoothing surface of silicon single crystal substrate Method for smoothing surface of silicon single crystal substrate

1998-06-26

1999-12-28

Hiteshew, Felisa

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

438706, 438734, H01L 21306

Patent

active

060081287

ABSTRACT:
A method for microscopically smoothing a surface of a wafer made of silicon single crystal having a low resistivity. In the method, a native oxide film grown on a surface of a wafer having polished by an ordinary mirror polishing process is removed at a temperature of less than 100.degree. C. with use of a mixture gas of HF and H.sub.2, and then an organic substance deposited thereon is removed at a temperature of less than 800.degree. C. with use of a mixture gas of HCl and H.sub.2. Re-growth of an oxide film is suppressed in a consistent H.sub.2 atmosphere, during which the wafer is substantially not varied in its surface roughness. Then the wafer is thermally treated in an H.sub.2 gas atmosphere at a temperature of not less than 800.degree. C. and less than 1000.degree. C. A process of etching the silicon single crystal substrate and a process of depositing silicon atoms caused by decomposition of a silane compound generated are competitively carried out to thereby soften the microscopic rough surface of the wafer and to improve a smoothness over the smoothness of the mirror-polished surface. Since all process temperatures are set to be less than 1000.degree. C., vaporization of impurities in the wafer can be suppressed and its low resistivity can be secured.

REFERENCES:
patent: 5846321 (1998-12-01), Habuka et al.
patent: 5869387 (1999-02-01), Sato et al.
patent: 5885346 (1999-03-01), Habuka et al.
Journal of Electrochemical Society Habuka, Hitoshi Roughness of Silicon Surface Heated Hydrogen Ambient vol. 142, No. 9 pp. 3092-3098.

Affiliated with

Also associated with

Rating

Method for smoothing surface of silicon single crystal substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for smoothing surface of silicon single crystal substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for smoothing surface of silicon single crystal substrate will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2382010